Relationship of background carrier concentration and defects in GaN grown by metalorganic vapor phase epitaxy
- 8 December 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (23) , 3376-3378
- https://doi.org/10.1063/1.120341
Abstract
Experimental results show that the background carrier concentrations in GaN films grown by metalorganic vapor phase epitaxy are related to defects. A thermal equilibrium method was used to calculate the background carrier concentration related to intrinsic defects in an ideal GaN crystal. The results show that the N vacancy concentration does not exceed 2×1017 cm−3 in GaN grown at temperatures ranging from 800 to 1500 K. It can be concluded that the N vacancy is one of the major sources of carriers when the carrier concentration n2×1017 cm−3; this conclusion may lead to ways for further improving the quality of GaN films.Keywords
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