The electrical characteristics of semi-insulating GaAs for high power switches
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 348-351
- https://doi.org/10.1109/ppc.1989.767495
Abstract
Experimental studies on electron-beam controlled, high power semiconductor switches have been performed. In experiments on semi-insulating GaAs switches, current densities of 57 A/cm/sup 2/ have been obtained with an electron-beam current density of 26 mA/cm/sup 2/. Switch resistances of 1 ohm-cm/sup 2/ are possible with an electron-beam current density of 1 A/cm/sup 2/ and for a load resistance of 50 ohms. The dark current was found to be a function of voltage and time with response times in the /spl mu/s to ms range. The dielectric strength exceeds 140 kV/cm for 3.5 /spl mu/s FWHM voltage pulses. The measured electrical characteristics and the fast response of semi-insulating GaAs make it a promising material for pulse power switches.Keywords
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