Polarization dependence of Si(111)-2×1 surface-phonon and surface-state excitations
- 15 August 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 34 (4) , 3007-3010
- https://doi.org/10.1103/physrevb.34.3007
Abstract
Electron-energy-loss spectroscopy measurements for the Si(111)-2×1 surface have been performed to investigate the polarization of the dipole-excited surface-phonon and surface-state excitations. We have studied the dependence of the dipole scattering cross section on the azimuthal orientation of the crystal with respect to the scattering plane. Azimuthal asymmetry for dipole cross sections are reported and are in agreement with recent theoretical predictions on the origin and dynamics of the strong dipole-excited surface-phonon loss. Considerations of symmetry and measurements of finite- vibrational linewidths and defect-dependent effects provide further insight into the vibrational and electronic structure of this surface.
Keywords
This publication has 23 references indexed in Scilit:
- Temperature-dependent electronic excitations of the Si(111)2×1 surfacePhysical Review B, 1985
- Direct Measurement of the Polarization Dependence of Si(111)2×1 Surface-State Absorption by Use of Photothermal Displacement SpectroscopyPhysical Review Letters, 1984
- Differential Reflectivity of Si(111)2×1 Surface with Polarized Light: A Test for Surface StructurePhysical Review Letters, 1984
- Wavevector-resolved electron-energy-loss spectroscopy on the dangling-bond states of Si(111)(2 × 1)Solid State Communications, 1983
- Reconstruction of Semiconductor Surfaces: Buckling, Ionicity, and-Bonded ChainsPhysical Review Letters, 1982
- New-Bonded Chain Model for Si(111)-(2×1) SurfacePhysical Review Letters, 1981
- Surface states on Si(111)-(2×1)Physical Review B, 1981
- Geometry-DependentSurface Core-Level Excitations for Si(111) and Si(100) SurfacesPhysical Review Letters, 1980
- Optical properties of dangling-bond states at cleaved silicon surfacesSurface Science, 1980
- Energy-Minimization Approach to the Atomic Geometry of Semiconductor SurfacesPhysical Review Letters, 1978