Geometry-DependentSurface Core-Level Excitations for Si(111) and Si(100) Surfaces
- 29 September 1980
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 45 (13) , 1112-1115
- https://doi.org/10.1103/physrevlett.45.1112
Abstract
Structure-dependent surface core-level shifts and photothreshold spectra which yield new surface geometry information are reported. For Si(100)-(2×1), ∼0.5 monolayer of surface atoms are found shifted to smaller binding energy (-0.5 eV) relative to the bulk; this rules out symmetric pairing models. Si(111)-(7×7) and Si(111)-(2×1) show different surface core-level spectra (e.g., layer shifted -0.7 eV versus ½ layer shifted - 0.4 eV), suggesting different geometries. Si(111)-(1×1)H exhibits first-layer (+ 0.26 eV) and second-layer (+ 0.15 eV) shifts.
Keywords
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