Fabrication of high-mobility Ge p -channelMOSFETs on Si substrates
- 18 March 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (6) , 503-504
- https://doi.org/10.1049/el:19990349
Abstract
The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant-mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm2/Vs.Keywords
This publication has 4 references indexed in Scilit:
- Surfactant-grown low-doped germanium layers on silicon with high electron mobilitiesThin Solid Films, 1998
- Enhanced Sb segregation in surfactant-mediated-heteroepitaxy: High-mobility, low-doped Ge on SiApplied Physics Letters, 1997
- High hole mobility in SiGe alloys for device applicationsApplied Physics Letters, 1994
- SiGe-channel heterojunction p-MOSFET'sIEEE Transactions on Electron Devices, 1994