High hole mobility in SiGe alloys for device applications
- 6 June 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (23) , 3124-3126
- https://doi.org/10.1063/1.111367
Abstract
We report high hole mobility in modulation-doped SiGe alloys with Ge content up to 80%. The layers which are grown using ultrahigh-vacuum chemical vapor deposition are of high crystalline quality, have smooth surfaces, and have a low density of misfit dislocations. As a result of strain and high Ge content, we have measured hole mobilities in the range of 800–1050 cm2/V s at room temperature, and 3300–3500 cm2/V s at 77 K. The corresponding two-dimensional sheet hole density is about 3×1012 cm−2. Those numbers are, to our knowledge, the highest numbers ever reported for a SiGe alloy. The resistivity of this two-dimensional hole channel at room temperature is, to our knowledge, the lowest for any p-type semiconductor quantum well.Keywords
This publication has 14 references indexed in Scilit:
- Very high mobility two-dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxyApplied Physics Letters, 1993
- Carrier velocity-field characteristics and alloy scattering potential in Si1−xGex/SiApplied Physics Letters, 1993
- Electron transport properties of Si/SiGe heterostructures: Measurements and device implicationsApplied Physics Letters, 1993
- p-type Ge-channel MODFETs with high transconductance grown on Si substratesIEEE Electron Device Letters, 1993
- Fabrication of a Si1-xGex Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor DepositionJapanese Journal of Applied Physics, 1993
- High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layerSemiconductor Science and Technology, 1992
- Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxyApplied Physics Letters, 1991
- High electron mobility in modulation-doped Si/SiGeApplied Physics Letters, 1991
- High hole mobility in Si/Si1−xGex/Si p-type modulation-doped double heterostructuresApplied Physics Letters, 1989
- Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET'sIEEE Electron Device Letters, 1986