Very high mobility two-dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy
- 18 October 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (16) , 2263-2264
- https://doi.org/10.1063/1.110547
Abstract
Modulation‐doped Si/GexSi1−x/Ge/GexSi1−x structures were fabricated in which a thin Ge layer was employed as the conduction channel for the two‐dimensional hole gas. The strained heterostructure was fabricated on top of a low threading dislocation density, totally relaxed, GexSi1−x buffer layer with a linearly graded Ge concentration profile. The best mobility of the two‐dimensional hole gas is 55 000 cm2/V s at 4.2 K with a concentration‐dependent hole effective mass of ≤0.10m0. The effect of the Ge/GeSi interface roughness on the 2DHG mobility was studied.Keywords
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