Effect of the Mn-Mn exchange interaction on the high-field magnetoresistance and magnetization in n-type Hg1xyCdxMnyTe

Abstract
The magnetoresistance and the magnetization in n-type semimagnetic semiconductors Hg1xy Cdx MnyTe (with x=0.027–0.214, y=0.009–0.023) have been measured in pulsed high magnetic fields up to 35 T. The magnetoresistance versus magnetic field curve displayed an anomaly at H=15–20 T, depending on the Mn composition. At the same magnetic field, a steplike anomaly was also observed in the magnetization. Both of these phenomena are attributed to the magnetic-field-induced alignment of the antiferromagnetically coupled nearest-neighbor Mn2+ ion pairs. The exchange constant J between ions in the pair was found to depend on the energy gap, varying in the range from -9.4 to -12.8 K.