The Position of the Dislocation Acceptor Level in n‐Type Ge
- 1 January 1968
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 27 (1) , 219-224
- https://doi.org/10.1002/pssb.19680270123
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Extrinsic Photoconductivity in Ge Caused by DislocationsPhysica Status Solidi (b), 1967
- Trapping Processes at Dislocations in Plastically Bent GermaniumPhysica Status Solidi (b), 1966
- The electrical properties of dislocations in semiconductorsAdvances in Physics, 1963
- Anisotropic Mobilities in Plastically Deformed GermaniumJournal of Applied Physics, 1959
- Recombination in Plastically Deformed GermaniumPhysical Review B, 1957
- Some defects in crystals grown from the melt - I. Defects caused by thermal stressesProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1956
- CXXIV. Statistics of the occupation of dislocation acceptor centresJournal of Computers in Education, 1954
- LXXXVII. Theory of dislocations in germaniumJournal of Computers in Education, 1954
- Dislocations in Plastically Deformed GermaniumPhysical Review B, 1954
- Plastic Deformation of Germanium and SiliconPhysical Review B, 1952