Optically Pumped Volume-Excited cw Room-Temperature In1−x Gax P (x ≤ 0.60) Platelet Lasers
- 1 March 1972
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (5) , 184-186
- https://doi.org/10.1063/1.1654101
Abstract
Room‐temperature cw laser operation well into the visible spectrum (λ ∼ 6000 Å) is reported for In1−xGaxP (x ≤ 0.60). Thin (1–5‐μ) experimental samples are compressed into In, under a thick (∼ 250‐μ) high‐index (η > 2. 6) SiC window, with a thin (10–50‐μ) narrow SiC platelet under part of the In1−xGaxP sample. The thin In1−xGaxP samples, in the compound cavity, are volume excited in a small spot with an argon laser so that the heat is easily removed by the SiC windows and nearby In heat sink.Keywords
This publication has 13 references indexed in Scilit:
- Stimulated Emission and Laser Operation (cw, 77°K) Associated with Deep Isoelectronic Traps in Indirect SemiconductorsPhysical Review Letters, 1972
- In1−x Gax P:N Laser Operation (cw, 77°K) on the Nitrogen A-Line Transition in Indirect Crystals (x ≥ 0.74) and in Direct Crystals above the Fundamental Band Edge (x ≥ 0.71)Applied Physics Letters, 1972
- In1−xGaxP p-n Junction LasersApplied Physics Letters, 1971
- SEMICONDUCTOR LASERS OPERATING CONTINUOUSLY IN THE ``VISIBLE'' AT ROOM TEMPERATUREApplied Physics Letters, 1971
- SPECTRAL BEHAVIOR, CARRIER LIFETIME, AND PULSED AND cw LASER OPERATION (77 °K) OF In1−xGaxPApplied Physics Letters, 1971
- JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATUREApplied Physics Letters, 1970
- High-Field Transport in- Type GaAsPhysical Review B, 1968
- SEMICONDUCTOR MASER OF GaAsApplied Physics Letters, 1962
- COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONSApplied Physics Letters, 1962
- Coherent Light Emission From GaAs JunctionsPhysical Review Letters, 1962