First direct beta measurement for parasitic lateral bipolar transistors in fully-depleted SOI MOSFET's

This publication has 3 references indexed in Scilit:

• The enhancement of gate-induced-drain-leakage (GIDL) current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain beta
  IEEE Electron Device Letters, 1992
• Quasi-SOI MOSFETs using selective epitaxy and polishing
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1992
• Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET's
  IEEE Transactions on Electron Devices, 1991