Quasi-SOI MOSFETs using selective epitaxy and polishing
- 1 January 1992
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A Quasi-SOI MOSFET structure has been fabricated in which the drain-side channel is placed over oxide while the source-side channel is left connected to the substrate. This device has many of the advantages of SOI MOSFET without some of its problems. In particular, the drain breakdown voltage is found to improve over both the bulk and the complete-SOI counterparts. It is confirmed that the maximum lateral electric field is lower in the SOI channel than in same-size bulk device. The selective epitaxy and polishing technology combination used here makes it possible to fabricate all device types ranging from bulk to quasi-SOI to complete SOI on the same substrate, thus facilitating meaningful comparative studies.Keywords
This publication has 5 references indexed in Scilit:
- Single-poly bipolar transistor with selective epitaxial silicon and chemo-mechanical polishingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Hot electron gate current and degradation in P-channel SOI MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Hot-electron effects in Silicon-on-insulator n-channel MOSFET'sIEEE Transactions on Electron Devices, 1987
- Performance Advantages of Submicron Silicon-On-Insulator Devices for ULSIMRS Proceedings, 1987