Hot electron gate current and degradation in P-channel SOI MOSFETs
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A lifetime prediction method for hot-carrier degradation in surface-channel p-MOS devicesIEEE Transactions on Electron Devices, 1990
- Hot-electron effects in Silicon-on-insulator n-channel MOSFET'sIEEE Transactions on Electron Devices, 1987
- Design tradeoffs between surface and buried-channel FET'sIEEE Transactions on Electron Devices, 1985