Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 587-590
- https://doi.org/10.1109/iedm.1990.237130
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Selective epitaxial growth of silicon and some potential applicationsIBM Journal of Research and Development, 1990
- Two-dimensional simulation and measurement of high-performance MOSFETs made on a very thin SOI filmIEEE Transactions on Electron Devices, 1989
- SOI by CVD: Epitaxial Lateral Overgrowth (ELO) process—ReviewJournal of Crystal Growth, 1983