A high-performance 0.25- mu m CMOS technology. II. Technology

This publication has 13 references indexed in Scilit:

• A comparative study of hot-carrier instabilities in p- and n-type poly gate MOSFETs
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• A high-performance 0.25- mu m CMOS technology. II. Technology
  IEEE Transactions on Electron Devices, 1992
• Cel Resist Processing For Submicron CMOS And Bipolar Circuits
  Published by SPIE-Intl Soc Optical Eng ,1988
• Source—Drain contact resistance in CMOS with self-aligned TiSi₂
  IEEE Transactions on Electron Devices, 1987
• The impact of intrinsic series resistance on MOSFET scaling
  IEEE Transactions on Electron Devices, 1987
• Design methodology for deep submicron CMOS
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1987
• A symmetric submicron CMOS technology
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1986
• Effects of ion implantation doping on the formation of TiSi2
  Journal of Vacuum Science & Technology A, 1984
• Very small MOSFET's for low-temperature operation
  IEEE Transactions on Electron Devices, 1977
• Design of ion-implanted MOSFET's with very small physical dimensions
  IEEE Journal of Solid-State Circuits, 1974