Single-poly bipolar transistor with selective epitaxial silicon and chemo-mechanical polishing
- 2 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A new DRAM cell with a transistor on a lateral epitaxial silicon layer (TOLE cell)IEEE Transactions on Electron Devices, 1990
- A 30-ps Si bipolar IC using super self-aligned process technologyIEEE Transactions on Electron Devices, 1986