Annealing studyof self-ion-irradiated gold by proton channeling
- 1 January 1976
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 29 (2) , 95-98
- https://doi.org/10.1080/00337577608233492
Abstract
The isochronal annealing of self-ion damage in gold, introduced at room temperature, was measured by the channeling-backscattering method. The results are compared with those obtained from transmission-electron microscope (TEM) observations on similar specimens. The temperature for the annealing stage was found to be 250°C, which agrees with the TEM results. The depth distribution of the bombardment damage is obtained from a single-scattering attenuation model of proton dechanneling at 200 keV. The damage profile has a maximum at 950 A which is a factor of 2.5 greater than predicted by amorphous energy-deposition theory. Throughout the observed annealing stage, one finds a regular decrease in defect concentration, with no anomalous changes in the defect profile.Keywords
This publication has 11 references indexed in Scilit:
- Dechanneling of fast particles by lattice defectsJournal of Nuclear Materials, 1974
- Direct observations of the annealing of stacking-fault tetrahedra in gold using high voltage electron microscopyPhilosophical Magazine, 1973
- Dechanneling from 2-MeVDamage in GoldPhysical Review B, 1973
- Effect of atomic displacement on dechannelingPhysics Letters A, 1973
- Lattice disorder studies in low-temperature nitrogen-implanted siliconRadiation Effects, 1973
- On the growth of annealing of stacking-fault tetrahedra in goldPhilosophical Magazine, 1972
- Dechanneling by stacking faults and dislocationsRadiation Effects, 1972
- Depth Profiles of the Lattice Disorder Resulting from Ion Bombardment of Silicon Single CrystalsJournal of Applied Physics, 1970
- Defect studies in crystals by means of channelingCanadian Journal of Physics, 1968
- Radiation‐induced point defect clusters in copper and goldPhysica Status Solidi (b), 1966