Quantized conductance in ballistic constrictions at 30 K
- 18 November 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (21) , 2727-2729
- https://doi.org/10.1063/1.105897
Abstract
Quantized conductance in a split-gate structure is observed at a temperature of 30 K. Plateaus in the conductance as a function of gate voltage are observed at 30 K, while traces of the first step exist as high as 44 K. Plateaus are also seen with a bias of up to 12 mV across the constriction. This performance is made possible by placing the two-dimensional electron gas (2DEG) 30 nm below the surface, and a gate separation of 100 nm. Simulations of this structure, using two-dimensional, self-consistent solutions of Schrödinger’s and Poisson’s equations, suggest subband separations of 10 meV.Keywords
This publication has 12 references indexed in Scilit:
- Quantized resistance in in-plane gated narrow constriction fabricated by wet etchingApplied Physics Letters, 1990
- Large subband spacings in δ-doped quantum wiresJournal of Applied Physics, 1990
- In-plane-gated quantum wire transistor fabricated with directly written focused ion beamsApplied Physics Letters, 1990
- Conductance characteristics of ballistic one-dimensional channels controlled by a gate electrodeApplied Physics Letters, 1989
- One-dimensional subbands and mobility modulation in GaAs/AlGaAs quantum wiresApplied Physics Letters, 1989
- Narrow conducting channels defined by helium ion beam damageApplied Physics Letters, 1988
- One-dimensional transport and the quantisation of the ballistic resistanceJournal of Physics C: Solid State Physics, 1988
- Quantized conductance of point contacts in a two-dimensional electron gasPhysical Review Letters, 1988
- Fabrication of quantum wires in GaAs/AlGaAs heterolayersJournal of Vacuum Science & Technology B, 1988
- One-Dimensional Conduction in the 2D Electron Gas of a GaAs-AlGaAs HeterojunctionPhysical Review Letters, 1986