Chemical Vapor Deposition of HfO[sub 2] Thin Films Using a Novel Carbon-Free Precursor: Characterization of the Interface with the Silicon Substrate
- 1 January 2002
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 149 (1) , G89-G94
- https://doi.org/10.1149/1.1425798
Abstract
HfO2HfO2 thin films were deposited on Si wafers by a chemical vapor deposition (CVD) technique at temperatures ranging from 200 to 400°C using a new carbon-free precursor [Hf(NO3)4].[Hf(NO3)4]. The growth behavior was under a steady state when the interfacial oxide layer was excluded in film thickness estimation by ellipsometry. The as-grown interfacial layer formed at 200°C was apparently composed of Hf, Si, and O. Postannealing under a N2N2 atmosphere at temperatures >500°C resulted in a decrease in interfacial layer thickness by decomposition of the Hf-Si-O layer to SiO2SiO2 and HfO2.HfO2. The HfO2HfO2 film showed a crystalline microstructure even in the as-deposited state when the film thickness was 170 Å. However, the films were amorphous when the film thickness was HfO2HfO2 thin films were approximately 18 and 22, respectively. © 2001 The Electrochemical Society. All rights reserved.Keywords
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