Field effect transistors with SrTiO3 gate dielectric on Si

${\mathrm{SrTiO}}_{\mathrm{3}}$ has been grown epitaxially by molecular beam epitaxy on Si. The capacitance of this 110 Å dielectric film is electrically equivalent to less than 10 Å of ${\mathrm{SiO}}_{\mathrm{2}}.$ This structure has been used to make capacitors and metal oxide semiconductor field effect transistors. The interface trap density between the ${\mathrm{SrTiO}}_{\mathrm{3}}$ and the Si is ${\text{6.4×10}}^{10}\hspace{0.17em}{\mathrm{states/cm}}^{\mathrm{2}}\mathrm{\hspace{0.17em}eV}$ and the inversion layer mobility is 221 and 62 cm²/V s for n- and p-channel devices, respectively. The gate leakage in these devices is two orders of magnitude smaller than a similar ${\mathrm{SiO}}_{\mathrm{2}}$ gate dielectric field effect transistor.