Photoacoustic optical and thermal characterization of Si and GaAs ion implanted layers
- 30 March 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (13) , 830-832
- https://doi.org/10.1063/1.98058
Abstract
The values of the thermal conductivity and of the optical absorption coefficient of ion implanted Si and GaAs have been measured in a nondestructive way by photoacoustic measurements. The values obtained for Si are in good agreement with those found in literature, while no data have been found for ion implanted GaAs as a function of the implanted ions dose. The thermal conductivity value for the implanted layers is more than two orders of magnitude lower than the ones for the respective crystalline material. The implanted ion dose dependence of the two parameters is reported for GaAs.Keywords
This publication has 8 references indexed in Scilit:
- Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantationJournal of Applied Physics, 1985
- Orientation dependence of high speed silicon crystal growth from the meltJournal of Crystal Growth, 1984
- Computer simulation of high speed melting of amorphous siliconApplied Physics Letters, 1983
- Macroscopic theory of pulsed-laser annealing. I. Thermal transport and meltingPhysical Review B, 1981
- Phase Transitions in Amorphous Si Produced by Rapid HeatingPhysical Review Letters, 1980
- A melting model for pulsing-laser annealing of implanted semiconductorsJournal of Applied Physics, 1979
- Laser annealing of boron-implanted siliconApplied Physics Letters, 1978
- Theory of the photoacoustic effect with solidsJournal of Applied Physics, 1976