Optical Properties of Multisource Thermally Evaporated III–V Semiconductor Compounds

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Abstract
A variety of III–V semiconductor films has been prepared using the multisource technique. The availability of such layers widens the possibilities for applying semiconductors to optical components requiring controlled layers such as interference filters. A study of the dispersion of refractive indices in films of InSb and InAs indicates that such properties behave similarly to those of the bulk materials. However, those absorption processes which are determined by excess carrier scattering can become much larger than in the bulk. Intrinsic edge absorption in n-type InAs films exhibits exponential behavior similar to that of bulk samples having approximately the same carrier concentrations. Solid solutions of III–V mixtures can be effected using the multisource technique permitting studies of such parameters as effective masses and reststrahlen frequencies as functions of the solutions. The reststrahlen frequency for a Ga3/4In1/4Sb film is given.