Ferroelectric behavior of Li-doped ZnO thin films on Si(100) by pulsed laser deposition

Thin films of Li-doped ZnO of different compositions $({\mathrm{Zn}}_{\text{1−x}}{\mathrm{Li}}_x)\mathrm{O},$ $\text{x=0.1,}$ 0.17, and 0.3 have been prepared on Si(100) substrates, with no buffer layer, by the pulsed laser deposition method. Ferroelectric behavior with a memory window of 1.2 V has been observed in capacitance–voltage measurements. The peak maximum in the capacitance–temperature curve suggests that the ferroelectric phase transition occurs around 340 K.