Monte carlo calculation of NDR in gallium antimonide
- 16 May 1971
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 5 (2) , K113-K116
- https://doi.org/10.1002/pssa.2210050236
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Electron Mobility in Direct-Gap Polar SemiconductorsPhysical Review B, 1970
- Three-level oscillator: a new form of transferred-electron deviceElectronics Letters, 1970
- Study of the (111) Conduction Band of GaSbPhysica Status Solidi (b), 1970
- High Electric Field Effects and Electron Transfer to Higher Conduction Band Minima in Gallium AntimonidePhysica Status Solidi (b), 1970
- Free-Carrier Infrared Absorption in III-V Semiconductors III. GaAs, InP, GaP and GaSbJournal of the Physics Society Japan, 1964
- The Effects of Elastic Deformation on the Electrical Conductivity of SemiconductorsPublished by Elsevier ,1960