High Electric Field Effects and Electron Transfer to Higher Conduction Band Minima in Gallium Antimonide
- 1 January 1970
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 38 (1) , 225-228
- https://doi.org/10.1002/pssb.19700380121
Abstract
The current–voltage characteristic of n‐type GaSb has been measured up to 9 kV/cm at 300 °K, and results for the longitudinal magnetoresistance at 300 °K are given up to 7 kV/cm. The experiments are compared with calculations based on a two‐band model taking into account carrier transfer to higher valleys. Avalanche breakdown is observed at the highest field strength under investigation.Keywords
This publication has 8 references indexed in Scilit:
- The gunn effect and conduction band structure in GaxIn1−xSb alloysSolid State Communications, 1969
- Energy relaxation time of hot electrons in GaAsPhysics Letters A, 1968
- Conduction-Band Structure of GaSb from Pressure Experiments to 50 kbarPhysical Review B, 1968
- Plasma Frequency as a Test of Intervalley Transfer in the Gunn EffectPhysical Review B, 1968
- Temperature Dependence of Carrier Concentrations and Conduction-Band Minima Separation of Gallium AntimonideJournal of Applied Physics, 1968
- Theory of negative-conductance amplification and of Gunn instabilities in "two-valley" semiconductorsIEEE Transactions on Electron Devices, 1966
- The intervalley transfer mechanism of negative resistivity in bulk semiconductorsProceedings of the Physical Society, 1965
- Energy Band Structure of Gallium AntimonideJournal of Applied Physics, 1961