Defects in (111) HgTe grown by molecular beam epitaxy
- 19 October 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (16) , 1239-1241
- https://doi.org/10.1063/1.98742
Abstract
Room‐temperature Hall mobilities of (100) HgTe films grown by molecular beam epitaxy can reach values of 27 000–31 000 cm2 V−1 s−1, while the mobilities of (111) films are only 14 000–16 000 cm2 V−1 s−1. We show that the defects which lead to the lower mobilities of (111) films are present in the first 1000 Å of growth. Transmission electron microscope studies reveal a cellular structure of high‐angle grain boundaries with some twinning about the (111) growth axis. These defects, and hence the reduced mobilities of the films, appear to result from island nucleation of the films.Keywords
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