Influence of Ga-As-Te interfacial phases on the orientation of epitaxial CdTe on GaAs
- 20 January 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (3) , 248-250
- https://doi.org/10.1063/1.96571
Abstract
When CdTe is grown by molecular beam or organometallic vapor phase epitaxy on (100) GaAs, the layer can grow with either a (100) or (111) orientation. Reflection high-energy electron diffraction and Auger studies are presented here which show that adsorption of different submonolayer amounts of Te on a GaAs surface can change the surface symmetry and the resulting CdTe orientation. A precursor surface to (111) growth results from the formation of a relatively Te-poor Ga-As-Te surface phase. A relatively Te-rich structure yields a surface with (100) symmetry and lead to (100) growth.Keywords
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