Reaction of HCl with the GaAs(100) surface
- 20 January 1994
- journal article
- Published by Elsevier in Surface Science
- Vol. 302 (1-2) , 192-204
- https://doi.org/10.1016/0039-6028(94)91109-6
Abstract
No abstract availableKeywords
This publication has 38 references indexed in Scilit:
- GaAs(100) (2×4) Surface Study by Molecular Beam Epitaxy and Field-Ion-Scanning-Tunneling-MicroscopyJapanese Journal of Applied Physics, 1993
- Surface far-ultraviolet photochemistry of ethyl chloride on gallium arsenide (100)The Journal of Physical Chemistry, 1993
- In situ scanning tunneling microscopy observation of surface morphology of GaAs(001) grown by molecular beam epitaxyApplied Physics Letters, 1992
- Ultraviolet photon-induced interaction of Cl2 with GaAs(110): Dissociation by means of charge transferThe Journal of Chemical Physics, 1992
- Investigations of the thermal reactions of chlorine on the GaAs(100) surfaceJournal of Physics: Condensed Matter, 1991
- Laser bilayer etching of GaAs surfacesApplied Physics Letters, 1989
- Selective Photochemical Dry Etching of Compound Semiconductors: Enhanced Control Through Secondary Electronic PropertiesMRS Proceedings, 1988
- In Situ Deoxidation of GaAs Substrates by HCl GasJapanese Journal of Applied Physics, 1987
- Theory of polar semiconductor surfacesJournal of Vacuum Science and Technology, 1979
- 1098. The infrared spectra of some addition compounds of aluminium and gallium trihalidesJournal of the Chemical Society, 1965