In situ scanning tunneling microscopy observation of surface morphology of GaAs(001) grown by molecular beam epitaxy
- 25 May 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (21) , 2675-2677
- https://doi.org/10.1063/1.106892
Abstract
The surface morphology of molecular-beam-epitaxy-grown GaAs(001) has been investigated using in situ scanning tunneling microscopy and reflection high-energy electron diffraction. Films grown on nominally flat substrates at very slow growth rates display a multilevel system of terraces elongated along [11̄0], suggesting an edge energy anisotropy of the order of 10:1 and a preference for sticking at B-type steps.Keywords
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