The meandering of steps on GaAs(100)
- 1 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 269-272
- https://doi.org/10.1016/0022-0248(89)90399-0
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Reflection high-energy electron diffraction oscillations during growth of metallic overlayers on ideal and nonideal metallic substratesJournal of Vacuum Science & Technology B, 1988
- Effects of substrate misorientation and background impurities on electron transport in molecular-beam-epitaxial-grown GaAs/AlGaAs modulation-doped quantum-well structuresJournal of Applied Physics, 1987
- Multilayer step formation after As adsorption on Si (100): Nucleation of GaAs on vicinal SiApplied Physics Letters, 1987
- Determination of terrace size and edge roughness in vicinal Si{100} surfaces by surface-sensitive diffractionJournal of Applied Physics, 1987
- Diffraction from stepped surfaces: II. Arbitrary terrace distributionsSurface Science, 1985
- Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurementsApplied Physics Letters, 1985
- Influence of substrate temperature on electron mobility in normal and inverted single period modulation doped AlxGa1−xAs/GaAs heterojunctionsJournal of Vacuum Science and Technology, 1982
- Film Deposition by Molecular-Beam TechniquesJournal of Vacuum Science and Technology, 1971