Multilayer step formation after As adsorption on Si (100): Nucleation of GaAs on vicinal Si
- 15 June 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (24) , 1739-1741
- https://doi.org/10.1063/1.97733
Abstract
We have used reflection high-energy electron diffraction to characterize the initial surface of misoriented Si (100) and then to follow the nucleation of GaAs. Measurement of the diffracted intensity along the length of the specular streak shows sharp structure due to an ordered array of steps. The initial surface contains monolayer steps. However, after exposing to an As4 flux above 650 °C, the surface morphology changes to multilayer steps with four times the original period. In contrast, below 650 °C, surface migration is inhibited and monolayer steps are retained. Subsequent growth of GaAs on either the monolayer- or multilayer-stepped surfaces yields single domain films. However, GaAs grown on the monolayer steps is misoriented toward the (111)A while GaAs grown on the multilayer steps is misoriented toward the (111)B.Keywords
This publication has 9 references indexed in Scilit:
- Suppression of antiphase domains in the growth of GaAs on Ge(100) by molecular beam epitaxyJournal of Crystal Growth, 1987
- Surface bands for single-domain 2 × 1 reconstructed Si(100) and Si(100):As. Photoemission results for off-axis crystalsPhysical Review B, 1986
- Material properties of high-quality GaAs epitaxial layers grown on Si substratesJournal of Applied Physics, 1986
- Reflection high energy electron diffraction studies of epitaxial growth on semiconductor surfacesJournal of Vacuum Science & Technology A, 1986
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Si(001)-2×1 Single-Domain Structure Obtained by High Temperature AnnealingJapanese Journal of Applied Physics, 1986
- Extrinsic effects in reflection high-energy electron diffraction patterns from MBE GaAsJournal of Vacuum Science & Technology B, 1984
- Sensitive reflection high-energy electron diffraction measurement of the local misorientation of vicinal GaAs surfacesApplied Physics Letters, 1984
- LEED study of the stepped surface of vicinal Si (100)Surface Science, 1980