Properties of copper donor levels in silicon
- 16 February 1970
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 1 (2) , 283-286
- https://doi.org/10.1002/pssa.19700010211
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Lifetime and capture cross-section studies of deep impurities in siliconMaterials Science and Engineering, 1968
- Deep impurities in siliconMaterials Science and Engineering, 1967
- Effective mass and intrinsic concentration in siliconSolid-State Electronics, 1967
- Properties of gold in siliconSolid-State Electronics, 1966
- Zur Zeitabhängigkeit raumladungsbegrenzter Injektionsströme in HalbleiternPhysica Status Solidi (b), 1966
- Zeitabhängigkeit raumladungsbegrenzter Injektionsströme in Fe‐dotiertem p‐SiliziumPhysica Status Solidi (b), 1966