Temperature-dependent pinning at the Al/n-GaAs(110) interface
- 7 April 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (14) , 919-921
- https://doi.org/10.1063/1.96658
Abstract
It is shown that at the Al/n‐GaAs(110) interface grown in ultrahigh vacuum at −80 °C the Fermi level remains unpinned at least up to a 3 monolayer coverage. In contrast, at room temperature the pinning near midgap is established after a deposition of approximately 1 monolayer of Al. The low‐temperature behavior is correlated with the growth of a more uniform overlayer which inhibits cluster and defect formation. This result provides a critical test of models of Schottky barrier formation.Keywords
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