Trimming Epitaxial GaAs Schottky-diode Parameters Via Anodic Oxidation
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Unified theory of high-frequency noise in Schottky barriersJournal of Applied Physics, 1973
- Millimeter frequency conversion using Au-n-type GaAs Schottky barrier epitaxial diodes with a novel contacting techniqueProceedings of the IEEE, 1965