Gallium Arsenide Schottky Barrier Doubler Diodes For Millimeter Wavelength Application
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Trimming Epitaxial GaAs Schottky-diode Parameters Via Anodic OxidationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Millimeter Wavelength Frequency MultipliersIEEE Transactions on Microwave Theory and Techniques, 1981