Kinematical binding transition of steps in a surface diffusion field
- 15 August 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 46 (7) , 4364-4366
- https://doi.org/10.1103/physrevb.46.4364
Abstract
The motion of steps in a surface diffusion field with asymmetric step kinetics is studied. An effective attraction from interference of the diffusion field causes a kinematical binding transition of two repulsive steps if undersaturation exceeds a critical value. This binding transition leads to a nonlinear growth law, V∼-‖δc, for δc<0. If there is a third step at a distance, it collides with the pair and recombination takes place. In a step train this recombination is repeated.
Keywords
This publication has 14 references indexed in Scilit:
- The meandering of steps and the terrace width distribution on clean Si(111): An in-situ experiment using reflection electron microscopySurface Science, 1992
- Electromigration Induced Step Bunching on Si Surfaces – How Does it Depend on the Temperature and Heating Current Direction?Japanese Journal of Applied Physics, 1991
- Terrace-width distributions on vicinal Si(111)Physical Review Letters, 1990
- Morphological instability of a terrace edge during step-flow growthPhysical Review B, 1990
- Reflection electron microscopy study of structural transformations on a clean silicon surface in sublimation, phase transition and homoepitaxySurface Science, 1990
- Transformations on clean Si(111) stepped surface during sublimationSurface Science, 1989
- Relaxation of Crystal Shapes Caused by Step MotionJournal of the Physics Society Japan, 1988
- Step Motion on Crystal SurfacesJournal of Applied Physics, 1966
- The microscopic kinetics of step motion in growth processesJournal of Physics and Chemistry of Solids, 1963
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951