A Fluorinated Organic-Silica Film with Extremely Low Dielectric Constant
- 1 April 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (4S)
- https://doi.org/10.1143/jjap.38.2368
Abstract
A fluorinated organic-silica film was prepared by quasi hydrogen-free chemical-vapor deposition. The content of methyl groups and fluorine atoms incorporated in the film were as much as 43% and 9% of that of Si. The film had good insulating characteristics with the dielectric constant, k, of as low as 2.5 even under as-prepared conditions. They were improved by vacuum annealing; k was 2.1 and the low-field resistivity was 1016 Ωcm after annealing at 500°C. It was confirmed that the film prepared at 200°C was stable for more than 20 days in the air.Keywords
This publication has 4 references indexed in Scilit:
- Particle-Packing Phenomena and Their Application in Materials ProcessingMRS Bulletin, 1997
- Chemical Vapor Deposition of Hydrogen-Free Silicon-Dioxide FilmsJapanese Journal of Applied Physics, 1997
- Preparation of Low-Dielectric-Constant F-Doped SiO2 Films by Plasma-Enhanced Chemical Vapor DepositionJapanese Journal of Applied Physics, 1996
- Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon OxideJapanese Journal of Applied Physics, 1994