Hole Trap Creation in SiO2 by Phosphorus Ion Penetration of Polycrystalline Silicon
- 1 January 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 29 (6) , 1467-1470
- https://doi.org/10.1109/tns.1982.4336388
Abstract
Anomalously deep penetration of polycrystalline silicon by high energy phosphorus ions is shown to produce large concentrations of hole traps in MOS devices. In some cases the damage created by the implantations could not be detected in pre-irradiation characteristics. A strong dependence of hole trap concentration on implantation dose was found up to very high doses, and the effects of ion energy and silicon thickness were determined. The observations and results are directly applicable to the definition of a radiation hardened MOS process.Keywords
This publication has 7 references indexed in Scilit:
- Channeling of implanted phosphorus through polycrystalline siliconApplied Physics Letters, 1980
- Hole trapping in the bulk of SiO2 layers at room temperatureJournal of Applied Physics, 1980
- Depth Profiling of n‐Type Dopants in Si and GaAs Using Cs+ Bombardment Negative Secondary Ion Mass Spectrometry in Ultrahigh VacuumJournal of the Electrochemical Society, 1979
- Nature and Annealing Behavior of Disorders in Ion Implanted SiliconJapanese Journal of Applied Physics, 1978
- Correlation between lattice damage and electrical activation of phosphorus-implanted siliconJournal of Applied Physics, 1978
- Introduction rates and annealing of defects in ion-implanted SiO2 layers on SiJournal of Applied Physics, 1974
- The origin of non-Gaussian profiles in phosphorus-implanted siliconJournal of Applied Physics, 1974