Correlation between lattice damage and electrical activation of phosphorus-implanted silicon
- 1 April 1978
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (4) , 2573-2575
- https://doi.org/10.1063/1.325070
Abstract
Quantitative comparision between the profiles of damage density before annealing and carrier concentration after annealing were examined for a wide range of phosphorus‐implantation dose (1013–1016 cm−2). Electrical‐activation mechanisms during low‐temperature (around 500 °C) annealing before epitaxial regrowth occurs were found to be different in the different damaged regions (very low, ∼20%, 20–75%, 75%∼damage density).This publication has 8 references indexed in Scilit:
- Annealing Behavior of Phosphorus Implanted Silicon CrystalsJapanese Journal of Applied Physics, 1977
- Regrowth behavior of ion-implanted amorphous layers on 〈111〉 siliconApplied Physics Letters, 1976
- Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal SiPhysics Letters A, 1975
- Damage Production and Annealing in Implanted Silicon as Studied by Optical Reflectivity ProfilingPublished by Springer Nature ,1975
- Electrical activation processes of p+ions channeled along the [110] axis of silicon: Effect of annealing on carriers profiles shapeRadiation Effects, 1975
- Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and DoseJournal of Applied Physics, 1972
- Ion implantation in semiconductors—Part II: Damage production and annealingProceedings of the IEEE, 1972
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962