Minority carrier trap measurements in schottky barriers on N-type LPE GaAs
- 1 January 1977
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 12 (12) , 1819-1821
- https://doi.org/10.1051/rphysap:0197700120120181900
Abstract
Photocapacitance transient technique has been applied to Schottky semitransparent barriers as an alternative method, instead of the classical capacitance voltage transient method in p+-n junctions for detecting minority carrier traps. In such a way and, under certain conditions, it is possible to detect and measure both majority and minority traps in Schottky barriers. The method applies well to Schottky barriers in LPE GaAs. A hole trap at 0.57 eV above valence band has been found in reasonable agreement with results in n-p + junctions in which n-layer was grown by LPEKeywords
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