A CAD investigation of depletion mechanisms in irradiated silicon microstrip detectors
- 1 April 1999
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 426 (1) , 131-134
- https://doi.org/10.1016/s0168-9002(98)01481-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- TCAD-based analysis of radiation-hardness in silicon detectorsIEEE Transactions on Nuclear Science, 1998
- Analysis of conductivity degradation in gold/platinum-doped siliconIEEE Transactions on Electron Devices, 1996
- Trapping induced Neff and electrical field transformation at different temperatures in neutron irradiated high resistivity silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1995
- Effect on charge collection and structure of n-type silicon detectors irradiated with large fluences of fast neutronsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994