Analysis of conductivity degradation in gold/platinum-doped silicon
- 1 January 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 43 (12) , 2269-2275
- https://doi.org/10.1109/16.544420
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Optimization of the tradeoff between switching speed of the internal diode and on-resistance in gold- and platinum-implanted power metal-oxide-semiconductor devicesIEEE Transactions on Electron Devices, 1992
- Compensating effects of platinum in n- and p-type siliconApplied Physics A, 1991
- Gold implantation in n-type silicon: Entropy factor and diffusion studiesJournal of Applied Physics, 1990
- Entropy factor of donor level in gold implanted siliconApplied Physics Letters, 1988
- Properties of platinum-associated deep levels in siliconJournal of Applied Physics, 1987
- Determination of the entropy-factor of the gold donor level in silicon by resistivity and DLTS measurementsApplied Physics A, 1984
- Electrical properties of platinum in siliconJournal of Applied Physics, 1979
- The degeneracy factor of the gold acceptor level in siliconJournal of Applied Physics, 1978
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976
- Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance techniqueSolid-State Electronics, 1974