Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance technique
- 30 November 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (11) , 1139-1145
- https://doi.org/10.1016/0038-1101(74)90157-9
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Frequency dependence of C and ΔV/Δ(C−2) of Schottky barriers containing deep impuritiesSolid-State Electronics, 1973
- Determination of deep-level energy and density profiles in inhomogeneous semiconductorsApplied Physics Letters, 1973
- Schottky-barrier capacitance measurements for deep level impurity determinationSolid-State Electronics, 1973
- Depth profile of concentration of deep-level impurities in vapor-phase epitaxial gallium-arsenide grown under various arsenic vapor pressuresJournal of Applied Physics, 1973
- Determination of the spatial distribution of deep centers from capacitance measurements of pn junctionsApplied Physics Letters, 1972
- Determination of deep levels in semiconductors from C-V measurementsIEEE Transactions on Electron Devices, 1972
- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970
- Recombination-Generation and Optical Properties of Gold Acceptor in SiliconPhysical Review B, 1970
- Electron-Hole Recombination Statistics in Semiconductors through Flaws with Many Charge ConditionsPhysical Review B, 1958
- Properties of Gold-Doped SiliconPhysical Review B, 1957