Determination of deep-level energy and density profiles in inhomogeneous semiconductors
- 1 August 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (3) , 150-151
- https://doi.org/10.1063/1.1654839
Abstract
A method is proposed for the determination of deep impurity levels and density profiles from C–V measurements and is demonstrated on GaAs Schottky barrier diodes. The technique involves measurements of the time dependence of the bias voltage instead of the barrier capacitance. The spatial distribution of a deep level is observed to exhibit a peak at the boundary between an epitaxial layer and the semi‐insulating substrate. This deep center is located 0.8 eV below the conduction band.Keywords
This publication has 7 references indexed in Scilit:
- Determination of the spatial distribution of deep centers from capacitance measurements of pn junctionsApplied Physics Letters, 1972
- Determination of deep levels in semiconductors from C-V measurementsIEEE Transactions on Electron Devices, 1972
- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970
- A technique for directly plotting the inverse doping profile of semiconductor wafersIEEE Transactions on Electron Devices, 1969
- Capacitance Measurements on Au–GaAs Schottky BarriersJournal of Applied Physics, 1968
- Capacitance of Junctions on Gold-Doped SiliconJournal of Applied Physics, 1968
- Determination of Deep Centers in Conducting Gallium ArsenideJournal of Applied Physics, 1966