Entropy factor of donor level in gold implanted silicon
- 15 February 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (7) , 558-560
- https://doi.org/10.1063/1.99416
Abstract
Rutherford backscattering spectrometry and spreading resistance techniques have been used to determine the concentration profiles of gold implanted on and diffused in p‐type silicon. The measurement of the gold concentration is possible by the solution of the charge neutrality condition and thus it requires the determination of the entropy factor X associated with the ionization of the gold donor level. The value of 28±2 compares well with the latest determination of X obtained by using rather complex techniques.Keywords
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