Properties of platinum-associated deep levels in silicon

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Abstract
The diffusion of platinum into n‐ and p‐type silicon has been carried out at temperatures ranging from 850 to 1000 °C and for times ranging from 1 to 50 h. Three deep levels associated with platinum were detected by the deep‐level transient spectroscopy technique: two acceptor levels of Ec−0.23 and Ec−0.52 eV and a donor level of Ev+0.36 eV. The Ec−0.23 and Ev+0.36 eV levels are produced by platinum occupying the substitutional sites of silicon lattice. The Ec−0.52 eV level has not been characterized but is probably associated with some interstitial platinum‐oxygen or other defect complex. Diffusion profiles of the substitutional platinum show that platinum diffuses into silicon mainly via the so‐called kick‐out mechanism.