Electrical properties of platinum in silicon as determined by deep-level transient spectroscopy
- 1 July 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (7) , 3172-3176
- https://doi.org/10.1063/1.323112
Abstract
Platinum was diffused into p+nn+ and n+pp+ silicon diodes at temperatures ranging from 860 to 910 °C for approximately 1 h. Using deep‐level transient spectroscopy, six levels associated with platinum in these silicon devices were detected. Ev+0.19 eV, Ev+0.28 eV, Ev+0.33 eV, Ev+0.41 eV, Ec−0.34 eV, and Ec−0.23 eV. The concentrations, thermal emission rates, and the capture cross sections for majority carriers at these defects are reported. The Ec−0.34 eV level has not been previously characterized but is probably the dominant recombination center.This publication has 7 references indexed in Scilit:
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