Platinum as a lifetime-control deep impurity in silicon

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Abstract
From transient capacitance measurements of emission rates determinations have been made of the electron capture cross section of the PtI acceptor in n‐type Si, and of the hole capture cross sections of the PtI donor and the PtII acceptor in p‐type Si. Diffusion length measurements, on a scanning electron microscope, show Pt to be a good lifetime controller in Si (at high carrier injection τn=τp=4.5×10−9 sec for a 1000 °C Pt diffusion). The PtII acceptor is determined to be the lifetime controller and its electron capture cross section is inferred to be 3×10−14 cm2. The generation component of leakage current for Pt‐doped diodes is 2 orders of magnitude less than for gold‐doped diodes of equal lifetime at 300 °K.