Quenched-in centers in silicon p+n junctions

This publication has 31 references indexed in Scilit:

• Thermal capture of electrons and holes at zinc centers in silicon
  Solid-State Electronics, 1973
• Thermal ionization rates and energies of holes at the double acceptor zinc centers in silicon
  Physica Status Solidi (a), 1972
• Current and capacitance transient responses of MOS capacitor. II. Recombination centers in the surface space charge layer
  Physica Status Solidi (a), 1972
• Properties of 1 MeV electron-irradiated defect centers in p-type silicon
  Physica Status Solidi (a), 1972
• Current and capacitance transient responses of MOS capacitor. I. General theory and applications to initially depleted surface without surface states
  Physica Status Solidi (a), 1972
• Thermal emission and capture of electrons at sulfur centers in silicon
  Solid-State Electronics, 1971
• Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments
  Solid-State Electronics, 1970
• Extrinsic ir Photoconductivity of Si Doped with B, Al, Ga, P, As, or Sb
  Journal of Applied Physics, 1967
• Diffusion and oxide masking in silicon by the box method
  Solid-State Electronics, 1960
• Statistics of the Recombinations of Holes and Electrons
  Physical Review B, 1952