Thermal capture of electrons and holes at zinc centers in silicon
- 31 October 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (10) , 1133-1139
- https://doi.org/10.1016/0038-1101(73)90140-8
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Thermal ionization rates and energies of holes at the double acceptor zinc centers in siliconPhysica Status Solidi (a), 1972
- Current and capacitance transient responses of MOS capacitor. II. Recombination centers in the surface space charge layerPhysica Status Solidi (a), 1972
- Photoelectronic Properties of Zinc Impurity in SiliconPhysical Review B, 1972
- Thermal emission and capture of electrons at sulfur centers in siliconSolid-State Electronics, 1971
- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970
- Electron drift velocity in avalanching silicon diodesIEEE Transactions on Electron Devices, 1967
- Measurement of the drift velocity of holes in silicon at high-field strengthsIEEE Transactions on Electron Devices, 1967
- Measurement of high-field carrier drift velocities in silicon by a time-of-flight techniqueIEEE Transactions on Electron Devices, 1967
- Electron-Hole Recombination Statistics in Semiconductors through Flaws with Many Charge ConditionsPhysical Review B, 1958
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955